Drive EMC-EMI Analysisregister.ansys.com.cn/ansyschina/minisite/201411_em/...IGBT Module Pack 3D...
Transcript of Drive EMC-EMI Analysisregister.ansys.com.cn/ansyschina/minisite/201411_em/...IGBT Module Pack 3D...
© 2011 ANSYS, Inc. June 23, 2014 1
EMI/EMC Analysis for Electrical Machines and Drives
电机及驱动系统EMI/EMC分析
Vincent Delafosse
Senior EM Product Manager
高级产品经理
© 2011 ANSYS, Inc. June 23, 2014 2
ANSYS offers a complete solution for EMC/EMI issues regarding Electrical Machines and Drives.
ANSYS能提供完整的基于机电系统EMC/EMI分析解决方案
EMC-EMI problems require a set of various techniques:
EMC-EMI问题专业且复杂,需求多重技术支撑:
Introduction前言
- Accurate semi conductor switching models
- Parasitics extractions for packages and cables
- Good models for Motors, other electromechanical components
- Ability to handle frequency dependent parasitics in time domain
- Far field studies
- 半导体功率器件开关模型精确建模
- 功率器件封装和电缆寄生参数抽取
- 电机和相关机电部件的真实模型
- 时域下频率相关寄生参数分析和处理
- 电磁辐射远场研究
© 2011 ANSYS, Inc. June 23, 2014 3
EMC-EMI Flow分析流程
IGBT Module Pack 3D
accurate model
Parameters
Extraction
Electromagnetic
(EM) study
Design and Couplings
Model IGBT Model
• Tridimensional IGBT pack model and EM study
• Parasitic model extraction
• IGBT circuit model
Far Field Study
• Far Field Study for Electric Field EM
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Step by step procedure 仿真分析规程
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Step1: Package validation
步骤一: 电力电子器件封装验证
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Tool used使用工具: Maxwell 3D
Step 1: Validation of the IGBT Pack 步骤一: IGBT电力电子器件封装验证
Goal is to check that目的:
- current levels are as expected
- There is no unbalanced parallel current paths
- Preparation for fatigue analysis
- 电流密度是否如期望所分布
- 并联支路电流是否平衡
- 为疲劳分析做准备工作
© 2011 ANSYS, Inc. June 23, 2014 7
Step1: current path validation 步骤一: 电流路径验证
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We combine:
联合仿真:
-Maxwell Magnetostatic
-ANSYS Static Stress
-N-Code Fatigue
Step 1: Fatigue Analysis 步骤一: 疲劳分析
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Step2: Electric Drive with semicondutor characterization
步骤二:
特征化参数建模半导体器件电气驱动仿真
© 2011 ANSYS, Inc. June 23, 2014 10
-- Copyright
ENTITY R IS
PORT (QUANTITY R : RESISTANCE := 1.0;
TERMINAL p,m : ELECTRICAL);
END ENTITY R;
ARCHITECTURE behav OF R IS
QUANTITY v ACROSS i THROUGH p TO m;
BEGIN
v == i*R;
END ARCHITECTURE behav;
Simplorer: Switching Nonlinear Multidomain Systems
+
-
B 11A 11 C11
A 12 A 2
B 12 B 2
C12 C2
ROT2ROT1
ASMS
3~M
J
STF
M(t)
GN
D
m
STF
F(t)
GN
D
? = M SV RS
G(s)P -Glied
I-Glied
D-Glied
G(z)
Filter
S & H
UnitDelay
NL
EQUBL
n
In pu ts
m
V alu es
x1 x2 y1
SINUS
n
Electrics Magnetics
JA
MMF
Mechanics
L
H Q
Hydraulics, Thermal, ...
Simplorer Simulation Data Bus / Simulator Coupling Technology
Block Diagrams
Differential Equations
(nth-order)
ucref-utri<=0
lcn
SET: itrcn:=0
SET: itrcp:=0
DEL := lcn##td
SET: itrcn:=0
SET: itrcp:=1
ucref-utri>=0
SET: itrcp:=0
SET: itrcn:=1
SET: itrcp:=0
SET: itrcn:=0
DEL := lcp##td
ucref-utri<=0
ucref-utri>=0
lcp
State Graphs Co-Analysis, Co-Simulation,
Parameter Extraction: Maxwell, PEXprts, Q3D
RMxprt, HFSS, SIwave
Matlab/Simulink
ModelSim/NCsim
Others
VHDL / VHDL-AMS C/C++ Spice
© 2011 ANSYS, Inc. June 23, 2014 11
Step2: Ideal Drive 步骤二:由理想电子电子器件驱动的仿真
Controller
Machine withideal load
0
0
0
0
0
0
A
Amp_5
A
Amp_3
A
Amp_1
A
Amp_6
A
Amp_4
A
Amp_2
A
AM_phC
A
AM_phB
A
AM4
A
AM_phA
+
V
V_phA
+
V
V_phB
+
V
V_phC
GAIN
GAIN1
GAIN
GAIN2
GAIN
GAIN3
GAIN
GAIN4
GAIN
GAIN5
GAIN
GAIN6
+
V
VDC
PhaseBPhaseA PhaseC
A
B
C
N
ROT1
ROT2w
+
V_ROT1
IGBT1
IGBT2
IGBT3
IGBT4
IGBT5
IGBT6
D1
D2 D3
D4 D5
D6
Inverter withideal IGBTs
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IGBT device: Device Parameter Extraction IGBT 器件: 器件参数抽取
Infineon : eupec FZ600R12KE3
Simplorer Device Characterization Tool automatic parameter fitting from data sheet
0.00 1.00 2.00 3.00 4.00 5.00Vce.V [V]
0.00
200.00
400.00
600.00
800.00
1000.00
1200.00
Ic.I [A
]
x02_OutputOutput Char. @Tj=125c
Curve Info
Ic.ITR
Output Vce-Ic
Vg=17 15 11
9
Product Data sheet
Simplorer
Characterization Tool
Device Model
也可是Mosfet、功率二极管等
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Infineon : eupec FZ600R12KE3
Equivalent Thermal Circuit Model (IGBT&Diode)
IGBT Diode
25℃
特性抽出ツール
0 650.0 125.0 250.0 375.0 500.0 0
70.00
10.00
20.00
30.00
40.00
50.00
60.00
E=f(Ic)
Eon
Eoff
I [A]
E
[mJ]
1k * igbt_... 1k * igbt_...
Eon = f... Eoff = f...
20.0 140.0 40.0 60.0 80.0 100.0 120.0 15.00
40.00
17.50
20.00
22.50
25.00
27.50
30.00
32.50
35.00
37.50
E=f(Tc)
Eon
Eoff
E
[mJ]
Tc [C]
Simplorer
IGBT device : Thermal Impedance Extraction IGBT 器件: 器件热阻参数抽取 Simplorer Device Characterization Tool
automatic parameter fitting from data sheet
Product Data sheet
Characterization Tool
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Drive with dynamic IGBTs and RMxprt model included
由动态IGBT驱动RMxprt电机模型的仿真
© 2011 ANSYS, Inc. June 23, 2014 15
Step3: Parasitics extraction
步骤三:封装寄生参数抽取
© 2011 ANSYS, Inc. June 23, 2014 16
Q3D Extractor
Quasi-static extraction tool
Solves for Parasitics • 3D Arbitrary structures
• 2D uniform cross-section – Cables
– Wires
– Transmission lines
Solver technologies: • Finite Element solver • Integral Equation solver • Electrostatic solver • Separate DC and AC solvers • Resistance & Inductance Solvers • Capacitance and Conductance solvers
Applications (Parasitic Extraction) • RLCG parameter extraction of
– Connectors (Q3D) – Bus Bars (Q3D) – Package lead frames (Q3D) – Transmission lines calc. (2D) – Cable characterization (2D) – Circuit model (2D & Q3D)
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Q3D Extractor Basics
Q3D Extractor Simulation Technology Quasi-static Electromagnetics
HP
C
Q3
D E
xtra
cto
r D
eskt
op
•Capacitance/Conductance •DC Resistance/Inductance •AC Resistance/Inductance
2D Extractor
•Multiprocessing •Distributed Q3D Solvers
Q3D Extractor
•Multiprocessing •Distributed 2D Extractor Solvers
Op
tim
etri
cs
Parametric, Optimization, Sensitivity, Statistical
Boundary Element Method Finite Element Method
Distributed Solve Option
•Admittance (C/G) •Impedance (R/L)
© 2011 ANSYS, Inc. June 23, 2014 18
Q3D Applications
Q3D is used for Parasitic Extraction • RLGC models
Applications
• Touchscreen technologies – Capacitive sensing
• DDRx Memory Applications
• Flash memory
• Packages – BGAs, SiP and PoPs
• IGBTs
© 2011 ANSYS, Inc. June 23, 2014 19
Resistance and Inductance
Q3D does two inductance calculations:
DC inductance
• No skin effect—3D volume currents
• Magnetic fields do not disturb current flow; DC conduction solver can be used
AC inductance
• Well developed skin effect—2D surface currents
• Magnetic fields strongly affect current flow; must solve for AC current distribution
Resistance
DC and varying AC component
log(f)
L(f)
acL
dcL
log(f)
log R(f)
fRac
dcR
© 2011 ANSYS, Inc. June 23, 2014 20
EMI analysis by Q3D LRC extraction
Circuit Model ・DC or AC
Static
Circuit Model ・DC or AC
State Space Model ・Freq. Sweep
Dynamic
Equiv. Circuit
Project info.
R/L vs Freq.
DC Circuit Model
AC Circuit Model
State Space / IFFT Model
Q3D Simplorer
IGBT Package Step2 : LRC Extraction IGBT封装参数:LRC 参数抽取
© 2011 ANSYS, Inc. June 23, 2014 21
Drive with IGBT including Package 带IGBT器件封装寄生参数的驱动电路仿真
© 2011 ANSYS, Inc. June 23, 2014 22
IGBT Switching – Conductive EMI IGBT 开关过程-- --传导干扰 EMI
Vce
Vg
Vge
Ic
Power
© 2011 ANSYS, Inc. June 23, 2014 23
Step4: Radiated Fields
步骤四: 辐射场分析
© 2011 ANSYS, Inc. June 23, 2014 24
FFT of Power surges during switching 开关过程中电涌波形FFT分析
© 2011 ANSYS, Inc. June 23, 2014 25
Radiated Fields 辐射电场图
使用工具: HFSS
© 2011 ANSYS, Inc. June 23, 2014 26
Electrical Fields on package 器件封装上的电场分布
© 2011 ANSYS, Inc. June 23, 2014 27
ANSYS has a lot of experience in capturing EMC-EMI effects for
electric drives.
Only ANSYS offers the combination of tools that can be combined
seamlessly to capture all the physics involved.
ANSYS拥有丰富的电气驱动EMC-EMI捕获、分析经验。
也只有ANSYS能够提供全套、多物理域无缝组合分析工具。
Conclusion结论