Datasheet IKD06N60RF...Datasheet Please read the Important Notice and Warnings at the end of this...

IGBTIGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage

IKD06N60RFTRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz

Datasheet

IndustrialPowerControl

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.4www.infineon.com 2014-03-12

IKD06N60RF

TRENCHSTOPTMRC-DrivesFastSeries

IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantageFeatures:

TRENCHSTOPTMReverseConducting(RC)technologyfor600Vapplicationsoffering

•OptimizedEon,EoffandQrrforlowswitchinglosses•Operatingrangeof4to30kHz•SmoothswitchingperformanceleadingtolowEMIlevels•Verytightparameterdistribution•Maximumjunctiontemperature175°C•Shortcircuitcapabilityof5µs•Bestinclasscurrentversuspackagesizeperformance•QualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating;RoHScompliant(soldertemperature260°C,MSL1)

CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/

Applications:

Domesticandindustrialdrives:

•Compressors•Pumps•Fans

G

C

E

G

E

C

KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIKD06N60RF 600V 6A 2.2V 175°C K06R60F PG-TO252-3

Datasheet 3 V2.42014-03-12

IKD06N60RF


TableofContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Datasheet 4 V2.42014-03-12

IKD06N60RF


MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value UnitCollector-emittervoltage,Tvj≥25°C VCE 600 V

DCcollectorcurrent,limitedbyTvjmaxTc=25°CTc=100°C

IC 12.06.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 18.0 A

Turn off safe operating areaVCE≤600V,Tvj≤175°C,tp=1µs - 18.0 A

Diodeforwardcurrent,limitedbyTvjmaxTc=25°CTc=100°C

IF 12.06.0

A

Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 18.0 A

Gate-emitter voltage VGE ±20 V

Short circuit withstand timeVGE=15.0V,VCC≤400VAllowed number of short circuits < 1000Time between short circuits: ≥ 1.0sTvj=150°C

tSC

5

µs

PowerdissipationTc=25°C Ptot 100.0 W

Operating junction temperature Tvj -40...+175 °C

Storage temperature Tstg -55...+150 °C

Soldering temperature,reflow soldering (MSL1 according to JEDEC J-STA-020) 260 °C

ThermalResistance

Valuemin. typ. max.

Parameter Symbol Conditions Unit

RthCharacteristics

IGBT thermal resistance,1)

junction - case Rth(j-c) - - 1.50 K/W

Diode thermal resistance,2)

junction - case Rth(j-c) - - 3.60 K/W

Thermal resistance, min. footprintjunction - ambient Rth(j-a) - - 75 K/W

Thermal resistance, 6cm² Cu onPCBjunction - ambient

Rth(j-a) - - 50 K/W

1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.

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IKD06N60RF


ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 600 - - V

Collector-emitter saturation voltage VCEsat

VGE=15.0V,IC=6.0ATvj=25°CTvj=175°C

--

2.202.30

2.50-

V

Diode forward voltage VF

VGE=0V,IF=6.0ATvj=25°CTvj=175°C

--

2.102.00

2.40-

V

Gate-emitter threshold voltage VGE(th) IC=0.11mA,VCE=VGE 4.3 5.0 5.7 V

Zero gate voltage collector current1) ICESVCE=600V,VGE=0VTvj=25°CTvj=175°C

--

--

401000

µA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA

Transconductance gfs VCE=20V,IC=6.0A - 2.9 - S

Integrated gate resistor rG none Ω

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


DynamicCharacteristic

Input capacitance Cies - 470 -

Output capacitance Coes - 24 -

Reverse transfer capacitance Cres - 14 -

VCE=25V,VGE=0V,f=1MHz pF

Gate charge QGVCC=480V,IC=6.0A,VGE=15V - 48.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 7.0 - nH

Short circuit collector currentMax. 1000 short circuitsTime between short circuits: ≥ 1.0s

IC(SC)VGE=15.0V,VCC≤400V,tSC≤5µsTvj=25°C

- 46 - A

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 7 - ns

Rise time tr - 8 - ns

Turn-off delay time td(off) - 106 - ns

Fall time tf - 22 - ns

Turn-on energy Eon - 0.09 - mJ

Turn-off energy Eoff - 0.09 - mJ

Total switching energy Ets - 0.18 - mJ

Tvj=25°C,VCC=400V,IC=6.0A,VGE=0.0/15.0V,RG(on)=23.0Ω,RG(off)=23.0Ω,Lσ=50nH,Cσ=30pFLσ,CσfromFig.E

1) Not subject to production test - verified by design/characterization

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IKD06N60RF


DiodeCharacteristic,atTvj=25°C

Diode reverse recovery time trr - 48 - ns

Diode reverse recovery charge Qrr - 0.16 - µC

Diode peak reverse recovery current Irrm - 7.4 - A

Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -195 - A/µs

Tvj=25°C,VR=400V,IF=6.0A,diF/dt=770A/µs

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=175°CTurn-on delay time td(on) - 8 - ns

Rise time tr - 8 - ns

Turn-off delay time td(off) - 115 - ns

Fall time tf - 35 - ns

Turn-on energy Eon - 0.15 - mJ

Turn-off energy Eoff - 0.13 - mJ

Total switching energy Ets - 0.28 - mJ

Tvj=175°C,VCC=400V,IC=6.0A,VGE=0.0/15.0V,RG(on)=23.0Ω,RG(off)=23.0Ω,Lσ=50nH,Cσ=30pFLσ,CσfromFig.E

DiodeCharacteristic,atTvj=175°C

Diode reverse recovery time trr - 74 - ns

Diode reverse recovery charge Qrr - 0.34 - µC

Diode peak reverse recovery current Irrm - 10.3 - A

Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -177 - A/µs

Tvj=175°C,VR=400V,IF=6.0A,diF/dt=770A/µs

Datasheet 7 V2.42014-03-12

IKD06N60RF


Figure 1. Collectorcurrentasafunctionofswitchingfrequency(Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V,VGE=15/0V,rG=23Ω,PCBmounting,6cm2Cu,Ptot=2,4W)

f,SWITCHINGFREQUENCY[kHz]

IC,C

OLLEC

TORCURREN

T[A]

0.1 1 10 1000.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Figure 2. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tvj≤175°C;VGE=15V)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLEC

TORCURREN

T[A]

1 10 100 10000.1

1

10

tp=10µs

20µs

50µs

100µs

200µs

500µs

DC

Figure 3. Powerdissipationasafunctionofcasetemperature(Tvj≤175°C)

TC,CASETEMPERATURE[°C]

Ptot ,PO

WER

DISSIPA

TION[W

]

25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

90

100

Figure 4. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tvj≤175°C)

TC,CASETEMPERATURE[°C]

IC,C

OLLEC

TORCURREN

T[A]

0 25 50 75 100 125 150 1750

2

4

6

8

10

12

14

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IKD06N60RF


Figure 5. Typicaloutputcharacteristic(Tvj=25°C)


IC,C

OLLEC

TORCURREN

T[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00

2

4

6

8

10

12

14

16

18

VGE=20V

17V

15V

13V

11V

9V

7V

Figure 6. Typicaloutputcharacteristic(Tvj=175°C)


IC,C

OLLEC

TORCURREN

T[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00

2

4

6

8

10

12

14

16

18

VGE=20V

17V

15V

13V

11V

9V

7V

Figure 7. Typicaltransfercharacteristic(VCE=10V)

VGE,GATE-EMITTERVOLTAGE[V]

IC,C

OLLEC

TORCURREN

T[A]

4 5 6 7 8 9 10 11 120

2

4

6

8

10

12

14

16

18Tj=25°CTj=175°C

Figure 8. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)

Tvj,JUNCTIONTEMPERATURE[°C]

VCEsat,C

OLLEC

TOR-EMITTE

RSAT

URAT

ION[V

]

0 25 50 75 100 125 150 1750.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0IC=0.5AIC=3AIC=6AIC=12A

Datasheet 9 V2.42014-03-12

IKD06N60RF


Figure 9. Typicalswitchingtimesasafunctionofcollectorcurrent(inductiveload,Tvj=175°C,VCE=400V,VGE=15/0V,rG=23Ω,DynamictestcircuitinFigure E)

IC,COLLECTORCURRENT[A]

t,SW

ITCHINGTIMES

[ns]

3 4 5 6 7 8 9 10 11 121

10

100

td(off)

tftd(on)

tr

Figure 10. Typicalswitchingtimesasafunctionofgateresistor(inductiveload,Tvj=175°C,VCE=400V,VGE=15/0V,IC=6A,DynamictestcircuitinFigure E)

rG,GATERESISTOR[Ω]

t,SW

ITCHINGTIMES

[ns]

10 20 30 40 50 60 70 801

10

100

td(off)

tftd(on)

tr

Figure 11. Typicalswitchingtimesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=6A,rG=23Ω,DynamictestcircuitinFigure E)


t,SW

ITCHINGTIMES

[ns]

25 50 75 100 125 150 1751

10

100td(off)

tftd(on)

tr

Figure 12. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0,11mA)


VGE(th) ,GAT

E-EM

ITTE

RTHRES

HOLD

VOLTAG

E[V]

25 50 75 100 125 150 1752.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0typ.min.max.

Datasheet 10 V2.42014-03-12

IKD06N60RF


Figure 13. Typicalswitchingenergylossesasafunctionofcollectorcurrent(inductiveload,Tvj=175°C,VCE=400V,VGE=15/0V,rG=23Ω,DynamictestcircuitinFigure E)

IC,COLLECTORCURRENT[A]

E,S

WITCHINGENER

GYLO

SSES

[mJ]

3 4 5 6 7 8 9 10 11 120.0

0.1

0.2

0.3

0.4

0.5

0.6Eoff

Eon

Ets

Figure 14. Typicalswitchingenergylossesasafunctionofgateresistor(inductiveload,Tvj=175°C,VCE=400V,VGE=15/0V,IC=6A,DynamictestcircuitinFigure E)

rG,GATERESISTOR[Ω]

E,S

WITCHINGENER

GYLO

SSES

[mJ]

10 20 30 40 50 60 70 800.0

0.1

0.2

0.3

0.4

0.5Eoff

Eon

Ets

Figure 15. Typicalswitchingenergylossesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=6A,rG=23Ω,DynamictestcircuitinFigure E)


E,S

WITCHINGENER

GYLO

SSES

[mJ]

25 50 75 100 125 150 1750.00

0.05

0.10

0.15

0.20

0.25

0.30Eoff

Eon

Ets

Figure 16. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(inductiveload,Tvj=175°C,VGE=15/0V,IC=6A,rG=23Ω,DynamictestcircuitinFigure E)


E,S

WITCHINGENER

GYLO

SSES

[mJ]

300 325 350 375 400 425 4500.0

0.1

0.2

0.3

0.4Eoff

Eon

Ets

Datasheet 11 V2.42014-03-12

IKD06N60RF


Figure 17. Typicalgatecharge(IC=6A)

QGE,GATECHARGE[nC]

VGE ,GAT

E-EM

ITTE

RVOLTAG

E[V]

0 10 20 30 40 50 600

2

4

6

8

10

12

14

16120V480V

Figure 18. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)


C,C

APAC

ITAN

CE[pF]

0 5 10 15 20 25 301

10

100

1000

Cies

Coes

Cres

Figure 19. Typicalshortcircuitcollectorcurrentasafunctionofgate-emittervoltage(VCE≤400V,startatTvj=25°C)


IC(SC) ,SH

ORTCIRCUITCOLLEC

TORCURREN

T[A]

12 14 16 18 200

10

20

30

40

50

60

70

80

90

Figure 20. Shortcircuitwithstandtimeasafunctionofgate-emittervoltage(VCE≤400V,startatTvj=150°C)


tSC,S

HORTCIRCUITW

ITHST

ANDTIME[µs]

10 11 12 13 14 15 16 17 18 190

2

4

6

8

10

12

Datasheet 12 V2.42014-03-12

IKD06N60RF


Figure 21. IGBTtransientthermalimpedanceasafunctionofpulsewidth1)(seepage4)(D=tp/T)

tp,PULSEWIDTH[s]

Zth(j -c

) ,TR

ANSIEN

TTH

ERMAL

IMPE

DAN

CE[K/W

]

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 10.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.10327.9E-5

20.72994.0E-4

30.56821.8E-3

40.06380.0307

Figure 22. Diodetransientthermalimpedanceasafunctionofpulsewidth2)(seepage4)(D=tp/T)

tp,PULSEWIDTH[s]

Zth(j -c

) ,TR

ANSIEN

TTH

ERMAL

IMPE

DAN

CE[K/W

]

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 10.01

0.1

1 D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

11.09587.9E-5

21.66432.8E-4

30.74611.7E-3

40.08270.02494

Figure 23. Typicalreverserecoverytimeasafunctionofdiodecurrentslope(VR=400V)

diF/dt,DIODECURRENTSLOPE[A/µs]

trr,R

EVER

SEREC

OVE

RYTIME[ns]

500 600 700 800 9000

20

40

60

80

100

120Tj=25°C, IF = 6ATj=175°C, IF = 6A

Figure 24. Typicalreverserecoverychargeasafunctionofdiodecurrentslope(VR=400V)


Qrr ,REV

ERSE

REC

OVE

RYCHAR

GE[µC]

500 600 700 800 9000.0

0.1

0.2

0.3

0.4

0.5

0.6

Tj=25°C, IF = 6ATj=175°C, IF = 6A

Datasheet 13 V2.42014-03-12

IKD06N60RF


Figure 25. Typicalreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)


Irr,R

EVER

SEREC

OVE

RYCURREN

T[A]

500 600 700 800 9004

5

6

7

8

9

10

11

12Tj=25°C, IF = 6ATj=175°C, IF = 6A

Figure 26. Typicaldiodepeakrateoffallofreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)


dIrr /dt,diodepeakrateoffallofI

rr [A/µs]

500 600 700 800 900-300

-250

-200

-150

-100

-50

0Tj=25°C, IF = 6ATj=175°C, IF = 6A

Figure 27. Typicaldiodeforwardcurrentasafunctionofforwardvoltage

VF,FORWARDVOLTAGE[V]

IF ,FORWAR

DCURREN

T[A]

0 1 2 3 40

2

4

6

8

10

12

14

16

18Tj=25°C, VGE=0V

Tj=175°C, VGE=0V

Figure 28. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature


VF ,FO

RWAR

DVOLTAG

E[V]

0 25 50 75 100 125 150 1750.0

0.5

1.0

1.5

2.0

2.5

3.0

IF=0.5AIF=3AIF=6AIF=12A

Datasheet 14 V2.42014-03-12

IKD06N60RF


2.5

REVISION

06

05-02-2016ISSUE DATE

EUROPEAN PROJECTION

0

SCALE

5mm

0

2.5

DOCUMENT NO.

Z8B00003328MILLIMETERS

4.57 (BSC)2.29 (BSC)

L4

D

N

H

E1

e1

e

E

D1

L3

1.18

0.51

0.89

5.02

9.40

6.354.32

5.97

3

b3

A

DIM

b2

c

b

c2

A1

4,95

MIN2.16

0.64

0.46

0.65

0.40

0.00

1.78

1.02

5.21

5.846.22

6.73

1.27

10.48

5.50

MAX2.41

0.15

1.15

0.61

0.89

0.98

L

Package Drawing PG-TO252-3

Datasheet 15 V2.42014-03-12

IKD06N60RF


t

a b

td(off)

tf t

rtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE

(t)

t

t

tt1 t

4

2% IC

10% VGE

2% VCE

t2

t3

E

t

t

V I toff

= x x d

1

2

CE CE

t

t

V I ton

= x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,

parasitic capacitor C ,

relief capacitor C ,

(only for ZVT switching)

s

s

r

t t t

Q Q Qrr a b

rr a b

= +

= +

Qa Qb

V (t)CE

VGE

(t)

I (t)C

V (t)CE

Testing Conditions

Datasheet 16 V2.42014-03-12

IKD06N60RF


RevisionHistory

IKD06N60RF

Revision:2014-03-12,Rev.2.4Previous Revision

Revision Date Subjects (major changes since last revision)

2.1 2012-02-24 Final data sheet

2.2 2013-12-10 New value ICES max limit at 175°C

2.3 2014-02-26 Without PB free logo

2.4 2014-03-12 Storage temp -55...+150°C

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PublishedbyInfineonTechnologiesAG81726München,Germany©InfineonTechnologiesAG2018.AllRightsReserved.

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