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Transcript of AC Bamunuarachchic
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PHYSICAL ELECTRONICS
ECX5239
Assignment 01
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Q1. conductivity difference in different materials, using
energy band diagrams.
Energy Band Diagram
The range of energies that an electron may possess in an
atom is known as the energy band. There Important energy bandsare,
Valence Band
Conduction Band
Forbidden Band
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Valence Band :-The Range of Energy possessed by valence electrons is known as
valence Bands.
Conduction Band :-
The Range of energy passed by these electrons is known as
conduction band.
Forbidden Band (or) Energy Gap :-
The energy band in between the condition band and the valence band
is called forbidden Band.
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Classification of Materials According to Energy Bands
Conductors :-
The materials in which conduction and valence bands overlap as shown in figure are
called conductors.
The overlapping indicates a large number of electrons available for conduction.
Hence the application of a small amount of voltage results a large amount of current.
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Insulators :-
The materials in which the condition band and valence bands are separated by a wide energy gap ( 15eV) as shown in figure.
A wide energy gap means that a large amount of energy is required, to free the electrons, by moving
them from the valence band into the condition band ;
Since at room temperature, the valence electrons of an insulator do not have enough energy to jump
in to the condition, therefore insulator do not have an ability to conduct current. Thus insulators have
very high resistively (or extremely low conductivity) at room temperatures.
However if the temperature is raised, some of the valence electrons may acquire energy and jump in to
the conduction band. It causes the resistively of insulators to decrease.
Therefore an insulator have negative temperature co-efficient of resistance.
Semiconductors :-
The materials, in which the conduction and valence bands are separated by a small energy gap (1eV)
as shown in figure are called semiconductors.
Silicon and germanium are the commonly used semiconductors.
A small energy gap means that a small amount of energy is required to free the electrons by moving
them from the valence band in to the conduction band.
The semiconductors behave4 like insulators at 0K, because no electrons are available in the
conduction band.
If the temperature is further increased, more valence electrons will acquire energy to jump into the
conduction band.
Thus like insulators, semiconductors also have negative temperature co-efficient of resistance.
It means that conductivity of semiconductors increases with the increases temperature.
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Q5:-The resistivity of a doped Si crystal is 9.27 10 and the Hall coefficient is 3.84 10. Assuming conduction by a single type of charge carrier, calculate the density
and the mobility of the carrier.
Resistivity = = 9.27 * 10-3m
Hall Co Efficient = RH = 3.84 * 10-4
m3
c-1
Mobility=
Carrier Density = n Conductivity () = 1/
Mobility of carrier = * RH = 3.84 * 10-4/ 9.27 * 10-3= 0.04142 m2/V.s
Carrier Density = n = / (e );where e = 1.6*1022
n = 1/ (e) =1/ [(9.27 * 10-3) (1.6*10-19) (0.04142)] = 1.628 * 1023m-3
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Q8:- Consider a rectangular sample of a metal with a length L, width W and the
thickness D. A current I is passed along L, perpendicular to the cross section W D.The face W Lis exposed to a magnetic field of density B. A voltmeter is connected
across the width to read the Hall voltage VH. Show that the reading is VH = IB / Den.
Let us take dX small element of length. Therefore dV= WDdX
Total Charge = dQ = enWDdX
But Current I = (dQ/dt) = enWD(dX/dt)
But charge velocity v = (dX/dt)
Therefore; en = I/WDv
Magnetic force = Fm= q (v * B) = ne(v * B) = (I/WDv)(vB) = IB/WD
Fm = IB/WD ---------------------- a
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Electrostatic force = Fe = qE = neE
A potential is develop across W, & is given by VH = EW,
Therefore, Fe = ne VH/W ------------------------ b
In equilibrium, Fe = Fm
Therefore neVH/W = IB/WD
ne VH= IB/D
Therefore, Hall Voltage = VH = IB / Den
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http://en.wikipedia.org
Micro Electronic Devices - 2ndEdition by KeithLeaver
Semiconductor Physics and Devices BasicPrinciples by Donald A. Neamen
http://en.wikipedia.org/http://en.wikipedia.org/http://en.wikipedia.org/http://en.wikipedia.org/