Post on 06-Jul-2018
8/17/2019 datasheet IRGP30B120KD-E
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Benefits
Absolute Maximum Ratings
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.42
RθJC Junction-to-Case - Diode ––– ––– 0.83 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
Wt Weight ––– 6 (0.21) ––– g (oz)
ZθJC Transient Thermal Impedance Junction-to-Case (Fig.24)
12/14/
E
G
C
IRGP30B120KD-E Motor Control Co-Pack IGBT
PD- 93818
TO-247AD
N-channel
www.irf.com 1
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 VIC @ TC = 25°C Continuous Collector Current (Fig.1) 60
IC @ TC = 100°C Continuous Collector Current (Fig.1) 30
ICM Pulsed Collector Current (Fig.3, Fig. CT.5) 120
ILM Clamped Inductive Load Current(Fig.4, Fig. CT.2) 120 A
IF @ TC = 100°C Diode Continuous Forward Current 30
IFM Diode Maximum Forward Current 120
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation (Fig.2) 300
PD @ TC = 100°C Maximum Power Dissipation (Fig.2) 120
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case)
°C
Mounting Torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
W
• Low VCE(on) Non Punch Through (NPT) Technology
• Low Diode VF (1.76V Typical @ 25A & 25°C)
• 10 µs Short Circuit Capability
• Square RBSOA
• Ultrasoft Diode Recovery Characteristics
• Positive VCE(on) Temperature Coefficient
• Extended Lead TO-247AD Package
• Benchmark Efficiency for Motor Control
Applications • Rugged Transient Performance
• Low EMI • Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation • Longer leads for Easier Mounting
VCES = 1200V
VCE(on) typ. = 2.28V
VGE = 15V, IC = 25A, 25°C
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Electrical Characteristics @ TJ = 25°C (unless otherwise spe cified)
P ara m ete r M in . T yp . M ax . U nits C o nd itio ns F ig .
V (BR)CES Collector-to-Emitter Breakdown Voltage 1 200 V V GE = 0V, Ic =250 µA
∆V ( BR) CES / ∆T j Tem perature Coef f . o f B reakdown Vol tage +1 .2 V /°C V GE = 0V, Ic = 1 m A ( 25 -125 oC )
2 .2 8 2 .4 8 IC = 25A, V G E = 15V 5, 6
Collector-to-Emitter Saturation 2 .4 6 2 .6 6 IC = 30A, V G E = 15V 7, 9
V CE(on) Vol tage 3 .4 3 4 .0 0 V IC = 60A, V G E = 15V 10
2 .7 4 3 .1 0 IC = 25A, V G E = 15V, T J = 1 25 °C 11
2 .9 8 3 .3 5 IC = 30A, V G E = 15V, T J = 1 25 °C
V GE(th) Gate Threshold Vol tage 4 .0 5 .0 6 .0 V V CE = V G E , IC = 250 µA 9,10,11,12
∆V GE(th) / ∆Tj Tem perature Coef f . o f T hreshold Vol tage - 1.2 m V/ oC V CE = V G E , IC = 1 m A ( 25 -125oC )
g fe Forward Transconductance 1 4 .8 1 6 .9 19 .0 S V CE = 50V, IC = 2 5 A , P W = 8 0 µ s
2 5 0 V GE = 0V,V CE = 1200V
ICE S Zero G ate Vol tage Col lector Current 3 2 5 67 5 µ A V GE = 0v , V CE = 1200V , T J =1 25°C
2 0 0 0 V GE = 0v , V CE = 1200V , T J =1 50°C
1 .7 6 2 .0 6 IC = 25A
V FM Diode Forward Vol tage Drop 1 .8 6 2 .1 7 V IC = 30A 8
1 .8 7 2 .1 8 IC = 25A, T J = 1 25 °C
2 .0 1 2 .4 0 IC = 30A, T J = 1 25 °C
IG E S Gate-to-Emit ter Leakage Current ±1 0 0 n A V GE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherw ise spec ified)
P ara m ete r M in . T yp . M ax . U nits C o nd itio ns F ig .
Q g Total Gate charge (turn-on) 1 69 2 5 4 IC = 25A 23
Q ge Gate - E mit ter Charge (turn-on) 1 9 2 9 n C V CC =600V CT1
Q gc Gate - Collector Charge (turn-on) 8 2 1 2 3 V GE = 15V
E on Turn-On S witch ing Loss 1 0 66 1 2 50 IC = 25A, V CC = 600V CT4
E off Turn-Off S witch ing Loss 1 4 93 1 8 00 µ J V GE = 15V , Rg = 5Ω, L=200µH WF1
E tot Total Switching Loss 25 59 3 0 50 T J = 25
o
C, Energy losses include tailand d iode reverse recoveryWF2
E on Turn-on Switching Loss 1 6 60 1 8 56 Ic =25A, V CC =600V 13, 15
E off Turn-off Switching Loss 2 1 18 2 5 80 µ J V GE = 15V , Rg = 5Ω, L=200µH CT4
E tot Total Switching Loss 37 78 4 4 36T J = 125
oC, Energy losses include tail
and d iode reverse recoveryWF1 & 2
td (on) Turn - on delay t ime 5 0 6 5 Ic =25A, V CC =600V 14, 16
tr Rise t im e 2 5 3 5 n s V GE = 15V , Rg = 5Ω, L=200µH CT4
td(off) Turn - o f f de lay t ime 2 1 0 23 0 T J = 125oC , WF1
tf Fal l t ime 6 0 7 5 WF2
C ies Input Capacitance 2 2 0 0 V GE = 0V
C oes Output Capaci tance 2 10 p F V CC = 30V 22
C res Reverse T ransfer Capaci tance 8 5 f = 1 .0 MHz
T J =150oC, Ic = 120A 4
R B S O A Reverse bias safe operating area F U L L S Q U A R E V CC = 1000V, V P = 1200V CT2
Rg = 5Ω, V GE = +15V to 0 V
T J = 150oC CT3
S C S O A Short Circu i t Safe O perat ing Area 1 0 ---- ---- µ s V CC = 900V,V P = 1200V WF4
Rg = 5Ω, V GE = +15V to 0 V
E rec Reverse recovery energy of the d iode 18 20 2 4 00 µ J T J = 125oC 17,18,19
tr r Diode Reverse recovery t ime 3 00 n s V CC = 600V , Ic = 25A 20, 21
Irr Peak Reverse Recovery Current 3 4 3 8 A V GE = 15V , Rg = 5Ω, L=200µH CT 4, WF3
L e Internal Emitter Inductance 1 3 n H Measured 5 mm from the package.
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Fig.1 - Maximum DC Collector
Current vs. Case Temperature
0
10
20
30
40
50
60
70
0 40 80 120 160
T C (°C)
I C
( A )
Fig.2 - Power Dissipation vs. Case
Temperature
0
40
80
120
160
200
240
280
320
0 40 80 120 160
T C (°C)
P t o t ( W )
Fig.3 - Forward SOA
T C =25°C; Tj < 150°C
0.1
1
10
100
1000
1 10 100 1000 10000 V CE (V)
I C
( A )
DC
10ms
1ms
100µs
10µs
2µs
PULSED
Fig.4 - Reverse Bias SOA
Tj = 150°C, V GE = 15V
1
10
100
1000
1 10 100 1000 10000 V CE (V)
I C
( A )
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Fig.5 - Typical IGBT Output
Characteristics
Tj= -40°C; tp=300µs
0
5
10
15
20
25
30
35
40
45
50
55
60
0 1 2 3 4 5 6 V CE (V)
I C
( A )
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8V
Fig.6 - Typical IGBT Output
Characteristics
Tj=25°C; tp=300µs
0
5
10
15
20
25
30
35
40
45
50
55
60
0 1 2 3 4 5 6 V CE (V)
I C
( A )
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8V
Fig.7 - Typical IGBT Output
Characteristics
Tj=125°C; tp=300µs
0
5
10
15
20
25
30
35
40
45
50
55
60
0 1 2 3 4 5 6 V CE (V)
I C
( A )
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8V
Fig.8 - Typical Diode Forward
Characteristic
tp=300µs
0
5
10
15
20
25
30
35
40
45
50
55
60
0 1 2 3 4V F (V)
I F
( A )
- 40°C
25°C
125°C
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Fig.9 - Typical V CE vs V GE
Tj= -40°C
0
2
4
6
8
10
12
14
16
18
20
6 8 10 12 14 16 18 20 V GE (V)
V C E
( V )
I CE =10A
I CE =25A
I CE =50A
Fig.12 - Typ. Transfer Characteristics
V CE =20V; tp=20µs
0
25
50
75
100
125
150
175
200
225
250
0 4 8 12 16 20 V GE (V)
I C
( A )
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Fig.10 - Typical V CE vs V GE
Tj= 25°C
0
2
4
6
8
10
12
14
16
18
20
6 8 10 12 14 16 18 20 V GE (V)
V C E ( V )
I CE =10A
I CE =25A
I CE
=50A
Fig.11 - Typical V CE vs V GE
Tj= 125°C
0
2
4
6
8
10
12
14
16
18
20
6 8 10 12 14 16 18 20 V GE (V)
V C E
( V )
I CE =10A
I CE =25A
I CE =50A
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Fig.16 - Typical Switching Time vs Rg
Tj=125°C; L=200µH; V CE =600V;
I CE =25A; V GE =15V
10
100
1000
0 5 10 15 20 25 30 35 40 45 50 55
Rg (ohms)
t ( n S )
tdon
tdoff
tr
tf
Fig.13 - Typical Energy Loss vs Ic
Tj=125°C; L=200µH; V CE =600V;
Rg=22 Ω ; V GE =15V
0
1000
2000
3000
4000
5000
6000
7000
8000
0 10 20 30 40 50 60 I C (A)
E
n e r g y ( µ J )
Eon
Eoff
Fig.15 - Typical Energy Loss vs Rg
Tj=125°C; L=200µH; V CE =600V;
I CE =25A; V GE =15V
1500
1700
1900
2100
2300
2500
2700
2900
3100
3300
3500
0 5 10 15 20 25 30 35 40 45 50 55
Rg (ohms)
E
n e r g y ( u J )
Eon
Eoff
Fig.14 - Typical Switching Time vs Ic
Tj=125°C; L=200µH; V CE =600V;
Rg=22 Ω ;V GE =15V
10
100
1000
0 10 20 30 40 50 60 I C (A)
t ( n S )
tdon
tdoff
tf
tr
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Fig.20 - Typical Diode Q RR
V CC =600V; V GE =15V; Tj=125°C
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
0 500 1000 1500
dI F / dt (A/µs)
Q R R
( n C )
51 Ω
22 Ω 10 Ω 5 Ω
50A
40A
30A
25A
20A
Fig.18 - Typical Diode I RR vs Rg
Tj=125°C; I F =25A
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30 35 40 45 50 55
Rg (ohms)
I R R
( A )
Fig.17 - Typical Diode I RR vs I F
Tj=125°C
0
5
10
15
20
25
30
35
40
45
0 10 20 30 40 50 60 I F (A)
I R R ( A )
Rg=5 Ω
Rg=10 Ω
Rg=22 Ω
Rg=51Ω
Fig.19 - Typical Diode I RR vs dI F /dt
V CC =600V; V GE =15V
I F =25A; Tj=125°C
0
5
10
15
20
25
30
35
40
45
0 500 1000 1500 dI F / dt (A/µs)
I R R
( A )
Rg=22 Ω
Rg=51Ω
Rg=10 Ω
Rg=5 Ω
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Fig.21 - Typ. Diode E rec vs. I F
Tj=125°C
800
1000
1200
1400
1600
1800
2000
2200
2400
0 10 20 30 40 50 60 I F (A)
E n e r g y ( u J )
5 Ω
10 Ω
22 Ω
51Ω
Fig.23 - Typ. Gate Charge vs. V GE
I C =25A; L=600µH
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200
Q G , Total Gate Charge (nC)
V G E
( V )
600V
800V
Fig.22 - Typical Capacitance vs V CE
V GE
=0V; f=1MHz
10
100
1000
10000
0 20 40 60 80 100
V CE (V)
C a p
a c I t a n c e ( p F )
C ies
C oes
C res
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Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit
Fig. CT.3 - S.C. SOA Circuit
L
R g
80 V D U T1000V
D
C
Driver
D U T
900V
Fig. CT.4 - Switching Loss Circuit
1K
VC CD U T
0
L
L
RgVCC
diode c lamp / D U T
D U T /
DRIVER
- 5V
Rg
VCCD U T
R =VCCICM
Fig. CT.5 - Resistive Load Circuit
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Fig. WF.1 - Typ. Turn-off Loss Waveform
@ Tj=125°C using Fig. CT.4
Fig. WF.2 - Typ. Turn-on Loss Waveform
@ Tj=125°C using Fig. CT.4
Fig. WF.4 - Typ. S.C. Waveform
@ T C =150°C using Fig. CT.3
Fig. WF.3 - Typ. Diode Recovery Waveform @ Tj=125°C using Fig. CT.4
0
200
400
600
800
1000
1200
-10 0 10 20 30
t i me (µs)
V
C E
( V
)
-50
0
50
100
150
200
250
I C E
( A
)
-1200
-1000
-800
-600
-400
-200
0
-0.5 0.0 0.5 1.0
t I me (µS)
V
C E
( V
)
-30
-20
-10
0
10
20
30
I C E
( A
)
Peak
IRR
QRR
tRR
10%
Peak
IRR
-100
0
100
200
300
400
500
600
700
800
900
4.0 4.1 4.2 4.3 4.4 4.5
t I me (µs)
V
C E
( V
)
-5
0
5
10
15
20
25
30
35
40
45
I C E
( A
)
TEST CURRENT
90% test current
10% test current
Eon Loss
5% VCE
t r
-100
0
100
200
300
400
500
600
700
800
-0.5 0.0 0.5 1.0 1.5 2.0 2.5
t I me (µs)
V
C E
( V
)
-5
0
5
10
15
20
25
30
35
40
I C E
( A
)
90% ICE
t f
5% VCE
5% ICE
Eoff Loss
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