datasheet IRGP30B120KD-E

8/17/2019 datasheet IRGP30B120KD-E

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INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

Benefits

Absolute Maximum Ratings

Thermal Resistance

Parameter Min. Typ. Max. Units

RθJC Junction-to-Case - IGBT ––– ––– 0.42

RθJC Junction-to-Case - Diode ––– ––– 0.83 °C/W

RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––

RθJA Junction-to-Ambient, typical socket mount ––– ––– 40

Wt Weight ––– 6 (0.21) ––– g (oz)

ZθJC Transient Thermal Impedance Junction-to-Case (Fig.24)

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E

G

C

IRGP30B120KD-E Motor Control Co-Pack IGBT

PD- 93818

TO-247AD

N-channel

www.irf.com 1

Parameter Max. Units

VCES Collector-to-Emitter Breakdown Voltage 1200 VIC @ TC = 25°C Continuous Collector Current (Fig.1) 60

IC @ TC = 100°C Continuous Collector Current (Fig.1) 30

ICM Pulsed Collector Current (Fig.3, Fig. CT.5) 120

ILM Clamped Inductive Load Current(Fig.4, Fig. CT.2) 120 A

IF @ TC = 100°C Diode Continuous Forward Current 30

IFM Diode Maximum Forward Current 120

VGE Gate-to-Emitter Voltage ± 20 V

PD @ TC = 25°C Maximum Power Dissipation (Fig.2) 300

PD @ TC = 100°C Maximum Power Dissipation (Fig.2) 120

TJ Operating Junction and -55 to + 150

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case)

°C

Mounting Torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

W

• Low VCE(on) Non Punch Through (NPT) Technology

• Low Diode VF (1.76V Typical @ 25A & 25°C)

• 10 µs Short Circuit Capability

• Square RBSOA

• Ultrasoft Diode Recovery Characteristics

• Positive VCE(on) Temperature Coefficient

• Extended Lead TO-247AD Package

• Benchmark Efficiency for Motor Control

Applications • Rugged Transient Performance

• Low EMI • Significantly Less Snubber Required

• Excellent Current Sharing in Parallel Operation • Longer leads for Easier Mounting

VCES = 1200V

VCE(on) typ. = 2.28V

VGE = 15V, IC = 25A, 25°C


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Electrical Characteristics @ TJ = 25°C (unless otherwise spe cified)

P ara m ete r M in . T yp . M ax . U nits C o nd itio ns F ig .

V (BR)CES Collector-to-Emitter Breakdown Voltage 1 200 V V GE = 0V, Ic =250 µA

∆V ( BR) CES / ∆T j Tem perature Coef f . o f B reakdown Vol tage +1 .2 V /°C V GE = 0V, Ic = 1 m A ( 25 -125 oC )

2 .2 8 2 .4 8 IC = 25A, V G E = 15V 5, 6

Collector-to-Emitter Saturation 2 .4 6 2 .6 6 IC = 30A, V G E = 15V 7, 9

V CE(on) Vol tage 3 .4 3 4 .0 0 V IC = 60A, V G E = 15V 10

2 .7 4 3 .1 0 IC = 25A, V G E = 15V, T J = 1 25 °C 11

2 .9 8 3 .3 5 IC = 30A, V G E = 15V, T J = 1 25 °C

V GE(th) Gate Threshold Vol tage 4 .0 5 .0 6 .0 V V CE = V G E , IC = 250 µA 9,10,11,12

∆V GE(th) / ∆Tj Tem perature Coef f . o f T hreshold Vol tage - 1.2 m V/ oC V CE = V G E , IC = 1 m A ( 25 -125oC )

g fe Forward Transconductance 1 4 .8 1 6 .9 19 .0 S V CE = 50V, IC = 2 5 A , P W = 8 0 µ s

2 5 0 V GE = 0V,V CE = 1200V

ICE S Zero G ate Vol tage Col lector Current 3 2 5 67 5 µ A V GE = 0v , V CE = 1200V , T J =1 25°C

2 0 0 0 V GE = 0v , V CE = 1200V , T J =1 50°C

1 .7 6 2 .0 6 IC = 25A

V FM Diode Forward Vol tage Drop 1 .8 6 2 .1 7 V IC = 30A 8

1 .8 7 2 .1 8 IC = 25A, T J = 1 25 °C

2 .0 1 2 .4 0 IC = 30A, T J = 1 25 °C

IG E S Gate-to-Emit ter Leakage Current ±1 0 0 n A V GE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherw ise spec ified)

P ara m ete r M in . T yp . M ax . U nits C o nd itio ns F ig .

Q g Total Gate charge (turn-on) 1 69 2 5 4 IC = 25A 23

Q ge Gate - E mit ter Charge (turn-on) 1 9 2 9 n C V CC =600V CT1

Q gc Gate - Collector Charge (turn-on) 8 2 1 2 3 V GE = 15V

E on Turn-On S witch ing Loss 1 0 66 1 2 50 IC = 25A, V CC = 600V CT4

E off Turn-Off S witch ing Loss 1 4 93 1 8 00 µ J V GE = 15V , Rg = 5Ω, L=200µH WF1

E tot Total Switching Loss 25 59 3 0 50 T J = 25

o

C, Energy losses include tailand d iode reverse recoveryWF2

E on Turn-on Switching Loss 1 6 60 1 8 56 Ic =25A, V CC =600V 13, 15

E off Turn-off Switching Loss 2 1 18 2 5 80 µ J V GE = 15V , Rg = 5Ω, L=200µH CT4

E tot Total Switching Loss 37 78 4 4 36T J = 125

oC, Energy losses include tail

and d iode reverse recoveryWF1 & 2

td (on) Turn - on delay t ime 5 0 6 5 Ic =25A, V CC =600V 14, 16

tr Rise t im e 2 5 3 5 n s V GE = 15V , Rg = 5Ω, L=200µH CT4

td(off) Turn - o f f de lay t ime 2 1 0 23 0 T J = 125oC , WF1

tf Fal l t ime 6 0 7 5 WF2

C ies Input Capacitance 2 2 0 0 V GE = 0V

C oes Output Capaci tance 2 10 p F V CC = 30V 22

C res Reverse T ransfer Capaci tance 8 5 f = 1 .0 MHz

T J =150oC, Ic = 120A 4

R B S O A Reverse bias safe operating area F U L L S Q U A R E V CC = 1000V, V P = 1200V CT2

Rg = 5Ω, V GE = +15V to 0 V

T J = 150oC CT3

S C S O A Short Circu i t Safe O perat ing Area 1 0 ---- ---- µ s V CC = 900V,V P = 1200V WF4

Rg = 5Ω, V GE = +15V to 0 V

E rec Reverse recovery energy of the d iode 18 20 2 4 00 µ J T J = 125oC 17,18,19

tr r Diode Reverse recovery t ime 3 00 n s V CC = 600V , Ic = 25A 20, 21

Irr Peak Reverse Recovery Current 3 4 3 8 A V GE = 15V , Rg = 5Ω, L=200µH CT 4, WF3

L e Internal Emitter Inductance 1 3 n H Measured 5 mm from the package.


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Fig.1 - Maximum DC Collector

Current vs. Case Temperature

0

10

20

30

40

50

60

70

0 40 80 120 160

T C (°C)

I C

( A )

Fig.2 - Power Dissipation vs. Case

Temperature

0

40

80

120

160

200

240

280

320

0 40 80 120 160

T C (°C)

P t o t ( W )

Fig.3 - Forward SOA

T C =25°C; Tj < 150°C

0.1

1

10

100

1000

1 10 100 1000 10000 V CE (V)

I C

( A )

DC

10ms

1ms

100µs

10µs

2µs

PULSED

Fig.4 - Reverse Bias SOA

Tj = 150°C, V GE = 15V

1

10

100

1000

1 10 100 1000 10000 V CE (V)

I C

( A )


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Fig.5 - Typical IGBT Output

Characteristics

Tj= -40°C; tp=300µs

0

5

10

15

20

25

30

35

40

45

50

55

60

0 1 2 3 4 5 6 V CE (V)

I C

( A )

V GE = 18V

V GE = 15V

V GE = 12V

V GE = 10V

V GE = 8V


Characteristics

Tj=25°C; tp=300µs

0

5

10

15

20

25

30

35

40

45

50

55

60

0 1 2 3 4 5 6 V CE (V)

I C

( A )

V GE = 18V

V GE = 15V

V GE = 12V

V GE = 10V

V GE = 8V


Characteristics

Tj=125°C; tp=300µs

0

5

10

15

20

25

30

35

40

45

50

55

60

0 1 2 3 4 5 6 V CE (V)

I C

( A )

V GE = 18V

V GE = 15V

V GE = 12V

V GE = 10V

V GE = 8V

Fig.8 - Typical Diode Forward

Characteristic

tp=300µs

0

5

10

15

20

25

30

35

40

45

50

55

60

0 1 2 3 4V F (V)

I F

( A )

- 40°C

25°C

125°C


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Fig.9 - Typical V CE vs V GE

Tj= -40°C

0

2

4

6

8

10

12

14

16

18

20

6 8 10 12 14 16 18 20 V GE (V)

V C E

( V )

I CE =10A

I CE =25A

I CE =50A

Fig.12 - Typ. Transfer Characteristics

V CE =20V; tp=20µs

0

25

50

75

100

125

150

175

200

225

250

0 4 8 12 16 20 V GE (V)

I C

( A )

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C


Tj= 25°C

0

2

4

6

8

10

12

14

16

18

20

6 8 10 12 14 16 18 20 V GE (V)

V C E ( V )

I CE =10A

I CE =25A

I CE

=50A


Tj= 125°C

0

2

4

6

8

10

12

14

16

18

20

6 8 10 12 14 16 18 20 V GE (V)

V C E

( V )

I CE =10A

I CE =25A

I CE =50A


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Fig.16 - Typical Switching Time vs Rg

Tj=125°C; L=200µH; V CE =600V;

I CE =25A; V GE =15V

10

100

1000

0 5 10 15 20 25 30 35 40 45 50 55

Rg (ohms)

t ( n S )

tdon

tdoff

tr

tf

Fig.13 - Typical Energy Loss vs Ic

Tj=125°C; L=200µH; V CE =600V;

Rg=22 Ω ; V GE =15V

0

1000

2000

3000

4000

5000

6000

7000

8000

0 10 20 30 40 50 60 I C (A)

E

n e r g y ( µ J )

Eon

Eoff

Fig.15 - Typical Energy Loss vs Rg

Tj=125°C; L=200µH; V CE =600V;

I CE =25A; V GE =15V

1500

1700

1900

2100

2300

2500

2700

2900

3100

3300

3500

0 5 10 15 20 25 30 35 40 45 50 55

Rg (ohms)

E

n e r g y ( u J )

Eon

Eoff

Fig.14 - Typical Switching Time vs Ic

Tj=125°C; L=200µH; V CE =600V;

Rg=22 Ω ;V GE =15V

10

100

1000

0 10 20 30 40 50 60 I C (A)

t ( n S )

tdon

tdoff

tf

tr


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Fig.20 - Typical Diode Q RR

V CC =600V; V GE =15V; Tj=125°C

2500

3000

3500

4000

4500

5000

5500

6000

6500

7000

0 500 1000 1500

dI F / dt (A/µs)

Q R R

( n C )

51 Ω

22 Ω 10 Ω 5 Ω

50A

40A

30A

25A

20A

Fig.18 - Typical Diode I RR vs Rg

Tj=125°C; I F =25A

0

5

10

15

20

25

30

35

40

45

0 5 10 15 20 25 30 35 40 45 50 55

Rg (ohms)

I R R

( A )

Fig.17 - Typical Diode I RR vs I F

Tj=125°C

0

5

10

15

20

25

30

35

40

45

0 10 20 30 40 50 60 I F (A)

I R R ( A )

Rg=5 Ω

Rg=10 Ω

Rg=22 Ω

Rg=51Ω

Fig.19 - Typical Diode I RR vs dI F /dt

V CC =600V; V GE =15V

I F =25A; Tj=125°C

0

5

10

15

20

25

30

35

40

45

0 500 1000 1500 dI F / dt (A/µs)

I R R

( A )

Rg=22 Ω

Rg=51Ω

Rg=10 Ω

Rg=5 Ω


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Fig.21 - Typ. Diode E rec vs. I F

Tj=125°C

800

1000

1200

1400

1600

1800

2000

2200

2400

0 10 20 30 40 50 60 I F (A)

E n e r g y ( u J )

5 Ω

10 Ω

22 Ω

51Ω

Fig.23 - Typ. Gate Charge vs. V GE

I C =25A; L=600µH

0

2

4

6

8

10

12

14

16

0 40 80 120 160 200

Q G , Total Gate Charge (nC)

V G E

( V )

600V

800V

Fig.22 - Typical Capacitance vs V CE

V GE

=0V; f=1MHz

10

100

1000

10000

0 20 40 60 80 100

V CE (V)

C a p

a c I t a n c e ( p F )

C ies

C oes

C res


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Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit

Fig. CT.3 - S.C. SOA Circuit

L

R g

80 V D U T1000V

D

C

Driver

D U T

900V

Fig. CT.4 - Switching Loss Circuit

1K

VC CD U T

0

L

L

RgVCC

diode c lamp / D U T

D U T /

DRIVER

- 5V

Rg

VCCD U T

R =VCCICM

Fig. CT.5 - Resistive Load Circuit


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Fig. WF.1 - Typ. Turn-off Loss Waveform

@ Tj=125°C using Fig. CT.4

Fig. WF.2 - Typ. Turn-on Loss Waveform

@ Tj=125°C using Fig. CT.4

Fig. WF.4 - Typ. S.C. Waveform

@ T C =150°C using Fig. CT.3

Fig. WF.3 - Typ. Diode Recovery Waveform @ Tj=125°C using Fig. CT.4

0

200

400

600

800

1000

1200

-10 0 10 20 30

t i me (µs)

V

C E

( V

)

-50

0

50

100

150

200

250

I C E

( A

)

-1200

-1000

-800

-600

-400

-200

0

-0.5 0.0 0.5 1.0

t I me (µS)

V

C E

( V

)

-30

-20

-10

0

10

20

30

I C E

( A

)

Peak

IRR

QRR

tRR

10%

Peak

IRR

-100

0

100

200

300

400

500

600

700

800

900

4.0 4.1 4.2 4.3 4.4 4.5

t I me (µs)

V

C E

( V

)

-5

0

5

10

15

20

25

30

35

40

45

I C E

( A

)

TEST CURRENT

90% test current

10% test current

Eon Loss

5% VCE

t r

-100

0

100

200

300

400

500

600

700

800

-0.5 0.0 0.5 1.0 1.5 2.0 2.5

t I me (µs)

V

C E

( V

)

-5

0

5

10

15

20

25

30

35

40

I C E

( A

)

90% ICE

t f

5% VCE

5% ICE

Eoff Loss


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datasheet IRGP30B120KD-E

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