n Mosfet Fdv303n

8/22/2019 n Mosfet Fdv303n

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August 1997

FDV303N

Digital FET, N-Channel

General Description Features

Absolute Maximum Ratings TA

= 25oC unless other wise noted

Symbol Parameter FDV303N Units

VDSS

Drain-Source Voltage, Power Supply Voltage 25 V

VGSS

Gate-Source Voltage, VIN

8 V

ID Drain/Output Current - Continuous 0.68 A

- Pulsed 2

PD

Maximum Power Dissipation 0.35 W

TJ,T

STGOperating and Storage Temperature Range -55 to 150 C

ESD Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

6.0 kV

THERMAL CHARACTERISTICS

RJA

Thermal Resistance, Junction-to-Ambient 357 C/W

FDV303N Rev.D1

25 V, 0.68 A continuous, 2 A Peak.

RDS(ON)

= 0.45 @ VGS

= 4.5 V

RDS(ON)

= 0.6 @ VGS

= 2.7 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. VGS(th)

< 1.5V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Compact industry standard SOT-23 surface mount

package.

Alternative to TN0200T and TN0201T.

These N-Channel enhancement mode field effect transistors are

produced using Fairchild's proprietary, high cell density, DMOS

technology. This very high density process is tailored to minimize

on-state resistance at low gate drive conditions. This device is

designed especially for application in battery circuits using either

one lithium or three cadmium or NMH cells. It can be used as an

inverter or for high-efficiency miniature discrete DC/DC

conversion in compact portable electronic devices like cellular

phones and pagers. This device has excellent on-state

resistance even at gate drive voltages as low as 2.5 volts.

Mark:303

SOT-23 SuperSOTTM

-8 SOIC-16SO-8 SOT-223SuperSOTTM

-6

D

G S

1997 Fairchild Semiconductor Corporation


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Electrical Characteristics(TA

= 25 OC unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS

Drain-Source Breakdown Voltage VGS

= 0 V, ID= 250 A 25 V

BVDSS

/TJ

Breakdown Voltage Temp. Coefficient ID= 250 A, Referenced to 25

oC 26 mV /

oC

IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS= 0 V 1 A

TJ

= 55C 10 A

IGSS

Gate - Body Leakage Current VGS

= 8 V, VDS

= 0 V 100 nA

ON CHARACTERISTICS (Note)

VGS(th)

/TJ

Gate Threshold Voltage Temp. Coefficient ID= 250 A, Referenced to 25

oC -2.6 mV /

oC

VGS(th)

Gate Threshold Voltage VDS

= VGS

, ID

= 250 A 0.65 0.8 1.5 V

RDS(ON)

Static Drain-Source On-Resistance VGS

= 4.5 V, ID

= 0.5 A 0.33 0.45

TJ

=125C 0.52 0.8

VGS

= 2.7 V, ID

= 0.2 A 0.44 0.6

ID(ON)

On-State Drain Current VGS

= 2.7 V, VDS

= 5 V 0.5 A

gFS

Forward Transconductance VDS

= 5 V, ID= 0.5 A 1.45 S

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance VDS

= 10 V, VGS

= 0 V,

f = 1.0 MHz

50 pF

Coss

Output Capacitance 28 pF

Crss Reverse Transfer Capacitance 9 pF

SWITCHING CHARACTERISTICS (Note)

tD(on)

Turn - On Delay Time VDD

= 6 V, ID

= 0.5 A,

VGS

= 4.5 V, RGEN

= 50

3 6 ns

tr

Turn - On Rise Time 8.5 18 ns

tD(off)

Turn - Off Delay Time 17 30 ns

tf

Turn - Off Fall Time 13 25 ns

Qg

Total Gate Charge VDS

= 5 V, ID

= 0.5 A,

VGS

= 4.5 V

1.64 2.3 nC

Qgs Gate-Source Charge 0.38 nC

Qgd

Gate-Drain Charge 0.45 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Maximum Continuous Drain-Source Diode Forward Current 0.3 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A (Note) 0.83 1.2 V

Note:

Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.

FDV303N Rev.D1


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FDV303N Rev.D1

0 0.5 1 1.5 20

0.3

0.6

0.9

1.2

1.5

V , DRAIN-SOURCE VOLTAGE (V)

I

,DRAIN-SOURCECURRENT(A)

3.5

2.7

2.5

2.0

1.5

DS

D

V = 4.5VGS

3.0

RDS(on),NORMAL

IZED

0 0.2 0.4 0.6 0.8 1 1.20.5

1

1.5

2

I , DRAIN CURRENT (A)

DRAIN-SOURCEON-RESISTANCE

V = 2.0VGS

2.73.0

4.5

D

3.5

2.5

Typical Electrical Characteristics

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

-50 -25 0 25 50 75 100 125 1500.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (C)

DRAIN-SOURCEON-RESISTANCE

J

V = 4.5 VGS

I =0.5 AD

R

,NORMALIZED

DS(ON)

Figure 3. On-Resistance Variation

with Temperature.

0 0.5 1 1.5 2 2.50

0.2

0.4

0.6

0.8

1

V , GATE TO SOURCE VOLTAGE (V)

I,DRAINCURRENT(A)

25C

125C

V = 5.0VDS

GS

D

T = -55CJ

Figure 5. Transfer Characteristics.

0 0.2 0.4 0.6 0.8 1 1.2

0.0001

0.001

0.01

0.1

1

V , BODY DIODE FORWARD VOLTAGE (V)

I,REVERSEDRAINCURRENT(A)

T = 125CJ

25C

-55C

V = 0VGS

SD

S

Figure 6. Body Diode Forward VoltageVariation with Source Current and Temperature.

Figure 4. On ResistanceVariation withGate-To- Source Voltage.

1 1.5 2 2.5 3 3.5 4 4.5 50

0.4

0.8

1.2

1.6

2

V , GATE TO SOURCE VOLTAGE (V)

ID= 0.5A

GS

R

,ON-RESISTANCE(OHM)

DS(on)

125C

25C


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FDV303N Rev.D1

0 0.4 0.8 1.2 1.6 20

1

2

3

4

5

Q , GATE CHARGE (nC)

V

,GATE-SOURCEV

OLTAGE(V)

g

GS

I = 0.5AD

10V

15V

V = 5VDS

0.1 0.2 0.5 1 2 5 10 20 400.01

0.03

0.1

0.3

1

3

5

V , DRAI N-SOURCE VOLTAGE (V)

I,DRAINCURRENT(A)

V = 4.5V

SINGLE PULSE

R =357C/W

T = 25C

GS

JA

DS

D

DC

1s

10ms

100ms

10s

RDS(O

N)LIM

IT

A

1ms

0.001 0.01 0.1 1 10 100 3000

1

2

3

4

5

SINGLE PULSE TIME (SEC)

POWER(W)

SINGLE PULSE

R =357 C/W

T = 25CJA

A

Figure 10. Single Pulse Maximum PowerDissipation.

0.0001 0.001 0.01 0.1 1 10 100 3000.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENTTHERMALRESISTANCE

Duty Cycle, D = t /t1 2

R (t) = r(t) * RR = 357 C/W

JAJA

JA

T - T = P * R (t)JAAJ

P(pk)

t1t 2

r(t),NORMALIZEDEFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Figure 11. Transient Thermal Response Curve.

0.1 0.5 1 2 5 10 255

10

20

50

100

150

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE(pF)

DS

Ciss

f = 1 MHz

V = 0VGS

Coss

Crss

Figure 8. Capacitance Characteristics.Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Typical Electrical And Thermal Characteristics

n Mosfet Fdv303n

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