Datasheet IPB65R099CFD7A - Infineon

1

IPB65R099CFD7A

Rev.2.1,2021-11-23Final Data Sheet

12

3

tab

D²PAK

Drain

Pin 2, Tab

Gate

Pin 1

Source

Pin 3

*1

*1: Internal body diode

MOSFET650VCoolMOSªCFD7ASJPowerDevice650VCoolMOS™CFD7AisInfineon'slatestgenerationofmarketleadingautomotivequalifiedhighvoltageCoolMOS™MOSFETs.Inadditiontothewell-knownattributesofhighqualityandreliabilityrequiredbytheautomotiveindustry,thenewCoolMOS™CFD7AseriesprovidesforanintegratedfastbodydiodeandcanbeusedforPFCandresonantswitchingtopologiesliketheZVSphase-shiftfull-bridgeandLLC.

Features•Latest650VautomotivequalifiedtechnologywithintegratedfastbodydiodeonthemarketfeaturingultralowQrr•LowestFOMRDS(on)*QgandRDS(on)*Eoss•100%avalanchetested•Best-in-classRDS(on)inSMDandTHDpackages

Benefits•Optimizedforhigherbatteryvoltagesupto475Vthankstofurtherimprovedrobustness•Lowerswitchinglossesenablinghigherswitchingfrequencies•Highqualityandreliability•Increasedefficiencyinlightloadandfullloadconditions

PotentialapplicationsSuitableforPFCandDC-DCstagesfor:•UnidirectionalandbidirectionalDC-DCconverters,•On-BoardbatteryChargers

ProductvalidationQualifiedaccordingtoAECQ101

Pleasenote:Forproductionpartapprovalprocess(PPAP)releaseweproposetoshareapplicationrelatedinformationduringanearlydesignphasetoavoiddelaysinPPAPrelease.PleasecontactInfineonsalesoffice.

Table1KeyPerformanceParametersParameter Value UnitVDS 650 V

RDS(on),max 99 mΩ

Qg,typ 53 nC

ID,pulse 107 A

Eoss @ 400V 6.8 µJ

Body diode diF/dt 1300 A/µs

Type/OrderingCode Package Marking RelatedLinksIPB65R099CFD7A PG-TO263-3 65A099F7 see Appendix A

2

650VCoolMOSªCFD7ASJPowerDeviceIPB65R099CFD7A


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3



1MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

2415 A TC=25°C

TC=100°C

Pulsed drain current2) ID,pulse - - 107 A TC=25°C

Avalanche energy, single pulse EAS - - 125 mJ ID=5.0A; VDD=50V; see table 10

Avalanche current, single pulse IAS - - 5.0 A -

MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400VGate source voltage (static) VGS -20 - 20 V static;

Gate source voltage (dynamic) VGS,pulse -30 - 30 V frepetition<=100kHz, tpulse <= 2ns

Power dissipation Ptot - - 127 W TC=25°CStorage temperature Tstg -55 - 150 °C -

Operating junction temperature Tj -40 - 150 °C -

Mounting torque - - - - Ncm -

Continuous diode forward current IS - - 24 A TC=25°CDiode pulse current2) IS,pulse - - 107 A TC=25°C

Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD<=12.5A,Tj=25°C see table 8

Maximum diode commutation speed diF/dt - - 1300 A/µs VDS=0...400V,ISD<=12.5A,Tj=25°C see table 8

1) Limited by Tj max.2) Pulse width tp limited by Tj,max3) Identical low side and high side switch with identical RG

4



2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case RthJC - - 0.98 °C/W -

Soldering temperature, reflow solderingallowed Tsold - - 260 °C reflow MSL1

5



3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsFor applications with applied blocking voltage > 475 V, it is required that the customer evaluates the impact of cosmic radiation effect in early design phase and contacts the Infineon sales office for the necessary technical support by Infineon.

ValuesMin. Typ. Max.

Parameter Symbol Unit Note/TestCondition

Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=1mAGate threshold voltage1) V(GS)th 3.5 4 4.5 V VDS=VGS,ID=0.63mA

Zero gate voltage drain current IDSS --

-80

1- µA VDS=650V,VGS=0V,Tj=25°C

VDS=650V,VGS=0V,Tj=150°C

Gate-source leakage current IGSS - - 0.1 µA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.0820.183

0.099- Ω VGS=10V,ID=12.5A,Tj=25°C

VGS=10V,ID=12.5A,Tj=150°C

Gate resistance RG - 5.9 - Ω f=250kHz,opendrain

Table5DynamiccharacteristicsExternal parasitic elements (PCB layout) influence switching behavior significantly.Stray inductances and coupling capacitances must be minimized. For layout recommendations please use provided application notes or contact Infineon sales office.

ValuesMin. Typ. Max.

Parameter Symbol Unit Note/TestCondition

Input capacitance Ciss - 2513 - pF VGS=0V,VDS=400V,f=250kHzOutput capacitance Coss - 36 - pF VGS=0V,VDS=400V,f=250kHz

Effective output capacitance, energyrelated2) Co(er) - 85 - pF VGS=0V,VDS=0...400V

Effective output capacitance, timerelated3) Co(tr) - 893 - pF ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time td(on) - 25 - ns VDD=400V,VGS=13V,ID=12.5A,RG=5.3Ω;seetable9

Rise time tr - 11 - ns VDD=400V,VGS=13V,ID=12.5A,RG=5.3Ω;seetable9

Turn-off delay time td(off) - 92 - ns VDD=400V,VGS=13V,ID=12.5A,RG=5.3Ω;seetable9

Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=12.5A,RG=5.3Ω;seetable9

1) We do not recommend using the CoolMOS mentioned in this datasheet to operate in “linear mode”. For assessment ofpotential “linear mode”, please contact Infineon sales office.2)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V3)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

6



Table6GatechargecharacteristicsValues


Gate to source charge Qgs - 15 - nC VDD=400V,ID=12.5A,VGS=0to10VGate to drain charge Qgd - 16 - nC VDD=400V,ID=12.5A,VGS=0to10VGate charge total Qg - 53 - nC VDD=400V,ID=12.5A,VGS=0to10VGate plateau voltage Vplateau - 5.7 - V VDD=400V,ID=12.5A,VGS=0to10V

Table7ReversediodecharacteristicsValues


Diode forward voltage VSD - 1.1 - V VGS=0V,IF=12.5A,Tj=25°C

Reverse recovery time trr - 147 - ns VR=400V,IF=12.5A,diF/dt=100A/µs;see table 8

Reverse recovery charge Qrr - 0.78 - µC VR=400V,IF=12.5A,diF/dt=100A/µs;see table 8

Peak reverse recovery current Irrm - 9.8 - A VR=400V,IF=12.5A,diF/dt=100A/µs;see table 8

7



4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

25

50

75

100

125

150

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-2

10-1

100

101

102

103

10 µs

1 µs

100 µs

1 ms

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-2

10-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[°C/W

]

10-5 10-4 10-3 10-2 10-1 10010-2

10-1

100

101

0.5

0.1

0.2

0.05

0.02

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

8



Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

25

50

75

100

125

150

175

20 V

10 V

8 V

7 V

6 V

5.5 V5 V4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

20

40

60

80

100

20 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 20 40 60 80 1000.150

0.180

0.210

0.240

0.270

0.300

10 V 20 V7 V6.5 V6 V5.5 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [no

rmalized]

-50 -25 0 25 50 75 100 125 1500.5

1.0

1.5

2.0

2.5

RDS(on)=f(Tj);ID=12.5A;VGS=10V

9



Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

20

40

60

80

100

120

140

160

150 °C

25 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 10 20 30 40 50 60 700

2

4

6

8

10

12

120 V 400 V

VGS=f(Qgate);ID=12.5Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.3 0.6 0.9 1.2 1.510-1

100

101

102

125 °C 25 °C

IF=f(VSD);parameter:Tj

Diagram12:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

25

50

75

100

125

EAS=f(Tj);ID=5.0A;VDD=50V

10



Diagram13:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-50 -25 0 25 50 75 100 125 150600

630

660

690

720

750

VBR(DSS)=f(Tj);ID=1mA

Diagram14:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 500100

101

102

103

104

105

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 5000

1

2

3

4

5

6

7

8

9

10

Eoss=f(VDS)

11



5TestCircuits

Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

12



6PackageOutlines

Figure1OutlinePG-TO263-3,dimensionsinmm/inches

13



7AppendixA

Table11RelatedLinks

• IFXCoolMOSCFD7AWebpage:www.infineon.com

• IFXCoolMOSCFD7Aapplicationnote:www.infineon.com

• IFXCoolMOSCFD7Asimulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

http://www.infineon.com/tools

http://www.infineon.com/CFD7A



14



RevisionHistoryIPB65R099CFD7A

Revision:2021-11-23,Rev.2.1

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2020-03-25 Release of final version

2.1 2021-11-23 Change of wording regarding breakdown voltage / cosmic ray

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PublishedbyInfineonTechnologiesAG81726München,Germany©2021InfineonTechnologiesAGAllRightsReserved.

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InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirementscomponentsmaycontaindangeroussubstances.ForinformationonthetypesinquestionpleasecontactyournearestInfineonTechnologiesOffice.InfineonTechnologiesComponentsmayonlybeusedinlife-supportdevicesorsystemswiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-supportdeviceorsystem,ortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbody,ortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Datasheet IPB65R099CFD7A - Infineon

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