1

IPD60R600P7S

Rev.2.2,2021-10-12Final Data Sheet

tab

12

3

DPAK

Drain

Pin 2

Gate

Pin 1

Source

Pin 3

MOSFET600VCoolMOSªP7PowerTransistorTheCoolMOS™7thgenerationplatformisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.The600VCoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.ItcombinesthebenefitsofafastswitchingSJMOSFETwithexcellenteaseofuse,e.g.verylowringingtendency,outstandingrobustnessofbodydiodeagainsthardcommutationandexcellentESDcapability.Furthermore,extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompactandmuchcooler.

Features•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness•Significantreductionofswitchingandconductionlosses•ExcellentESDrobustness>2kV(HBM)forallproducts•BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mm²)•Productvalidationacc.JEDECStandard

Benefits•Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages•Simplifiedthermalmanagementduetolowswitchingandconduction losses•Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kVESD protection•Suitableforawidevarietyofapplicationsandpowerranges

PotentialapplicationsPFCstages,hardswitchingPWMstagesandresonantswitchingstagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,TelecomandUPS.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj,max 650 V

RDS(on),max 600 mΩ

Qg,typ 9 nC

ID,pulse 16 A

Eoss @ 400V 1.1 µJ

Body diode diF/dt 900 A/µs

Type/OrderingCode Package Marking RelatedLinksIPD60R600P7S PG-TO252-3 60S600P7 see Appendix A

2

600VCoolMOSªP7PowerTransistorIPD60R600P7S

Rev.2.2,2021-10-12Final Data Sheet

TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3

600VCoolMOSªP7PowerTransistorIPD60R600P7S

Rev.2.2,2021-10-12Final Data Sheet

1MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

64 A TC=25°C

TC=100°C

Pulsed drain current2) ID,pulse - - 16 A TC=25°C

Avalanche energy, single pulse EAS - - 17 mJ ID=1.6A; VDD=50V; see table 10

Avalanche energy, repetitive EAR - - 0.08 mJ ID=1.6A; VDD=50V; see table 10

Avalanche current, single pulse IAS - - 1.6 A -

MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400VGate source voltage (static) VGS -20 - 20 V static;

Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)

Power dissipation Ptot - - 30 W TC=25°CStorage temperature Tstg -40 - 150 °C -

Operating junction temperature Tj -40 - 150 °C -

Mounting torque - - - - Ncm -

Continuous diode forward current IS - - 6 A TC=25°CDiode pulse current2) IS,pulse - - 16 A TC=25°C

Reverse diode dv/dt3) dv/dt - - 50 V/ns VDS=0...400V,ISD<=6A,Tj=25°C see table 8

Maximum diode commutation speed diF/dt - - 900 A/µs VDS=0...400V,ISD<=6A,Tj=25°C see table 8

Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1) Limited by Tj,max. Maximum Duty Cycle D = 0.502) Pulse width tp limited by Tj,max3) Identical low side and high side switch with identical RG

4

600VCoolMOSªP7PowerTransistorIPD60R600P7S

Rev.2.2,2021-10-12Final Data Sheet

2Thermalcharacteristics

Table3ThermalcharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Thermal resistance, junction - case RthJC - - 4.19 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint

Thermal resistance, junction - ambientfor SMD version RthJA - 35 45 °C/W

Device on 40mm*40mm*1.5mmepoxy PCB FR4 with 6cm² (onelayer, 70µm thickness) copper areafor drain connection and cooling.PCB is vertical without air streamcooling.

Soldering temperature, wave & reflowsoldering allowed Tsold - - 260 °C reflow MSL3

5

600VCoolMOSªP7PowerTransistorIPD60R600P7S

Rev.2.2,2021-10-12Final Data Sheet

3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mAGate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.08mA

Zero gate voltage drain current IDSS --

-10

1- µA VDS=600V,VGS=0V,Tj=25°C

VDS=600V,VGS=0V,Tj=150°C

Gate-source leakage current IGSS - - 1000 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.4901.152

0.600- Ω VGS=10V,ID=1.7A,Tj=25°C

VGS=10V,ID=1.7A,Tj=150°C

Gate resistance RG - 6.3 - Ω f=1MHz,opendrain

Table5DynamiccharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Input capacitance Ciss - 363 - pF VGS=0V,VDS=400V,f=250kHzOutput capacitance Coss - 7 - pF VGS=0V,VDS=400V,f=250kHz

Effective output capacitance, energyrelated1) Co(er) - 14 - pF VGS=0V,VDS=0...400V

Effective output capacitance, timerelated2) Co(tr) - 149 - pF ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time td(on) - 7 - ns VDD=400V,VGS=13V,ID=1.7A,RG=10.0Ω;seetable9

Rise time tr - 6 - ns VDD=400V,VGS=13V,ID=1.7A,RG=10.0Ω;seetable9

Turn-off delay time td(off) - 37 - ns VDD=400V,VGS=13V,ID=1.7A,RG=10.0Ω;seetable9

Fall time tf - 19 - ns VDD=400V,VGS=13V,ID=1.7A,RG=10.0Ω;seetable9

Table6GatechargecharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Gate to source charge Qgs - 2 - nC VDD=400V,ID=1.7A,VGS=0to10VGate to drain charge Qgd - 3 - nC VDD=400V,ID=1.7A,VGS=0to10VGate charge total Qg - 9 - nC VDD=400V,ID=1.7A,VGS=0to10VGate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=1.7A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

6

600VCoolMOSªP7PowerTransistorIPD60R600P7S

Rev.2.2,2021-10-12Final Data Sheet

Table7ReversediodecharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Diode forward voltage VSD - 0.9 - V VGS=0V,IF=1.7A,Tj=25°C

Reverse recovery time trr - 160 - ns VR=400V,IF=1A,diF/dt=100A/µs;see table 8

Reverse recovery charge Qrr - 0.71 - µC VR=400V,IF=1A,diF/dt=100A/µs;see table 8

Peak reverse recovery current Irrm - 9.9 - A VR=400V,IF=1A,diF/dt=100A/µs;see table 8

7

600VCoolMOSªP7PowerTransistorIPD60R600P7S

Rev.2.2,2021-10-12Final Data Sheet

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

10

20

30

40

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-4

10-3

10-2

10-1

100

101

102

10 µs

1 µs

100 µs

1 ms10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-4

10-3

10-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms10 ms

DC

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-110-1

100

101

0.5

0.02

single pulse

0.01

0.2

0.1

0.05

ZthJC=f(tP);parameter:D=tp/T

8

600VCoolMOSªP7PowerTransistorIPD60R600P7S

Rev.2.2,2021-10-12Final Data Sheet

Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

5

10

15

2020 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

2

4

6

8

10

1220 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 2 4 6 8 10 121.000

1.200

1.400

1.600

1.800

2.000

2.200

7 V

20 V

6 V

10 V

6.5 V

5.5 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [normalized]

-50 -25 0 25 50 75 100 125 1500.000

0.500

1.000

1.500

2.000

2.500

3.000

RDS(on)=f(Tj);ID=1.7A;VGS=10V

9

600VCoolMOSªP7PowerTransistorIPD60R600P7S

Rev.2.2,2021-10-12Final Data Sheet

Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

5

10

15

20

150 °C

25 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 2 4 6 8 10 120

2

4

6

8

10

12

120 V 400 V

VGS=f(Qgate);ID=1.7Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.810-1

100

101

102

125 °C 25 °C

IF=f(VSD);parameter:Tj

Diagram12:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

2

4

6

8

10

12

14

16

18

20

EAS=f(Tj);ID=1.6A;VDD=50V

10

600VCoolMOSªP7PowerTransistorIPD60R600P7S

Rev.2.2,2021-10-12Final Data Sheet

Diagram13:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-50 -25 0 25 50 75 100 125 150540

550

560

570

580

590

600

610

620

630

640

650

660

670

680

690

VBR(DSS)=f(Tj);ID=1mA

Diagram14:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 50010-1

100

101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 5000.0

0.5

1.0

1.5

Eoss=f(VDS)

11

600VCoolMOSªP7PowerTransistorIPD60R600P7S

Rev.2.2,2021-10-12Final Data Sheet

5TestCircuits

Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

12

600VCoolMOSªP7PowerTransistorIPD60R600P7S

Rev.2.2,2021-10-12Final Data Sheet

6PackageOutlines

Figure1OutlinePG-TO252-3,dimensionsinmm/inches

13

600VCoolMOSªP7PowerTransistorIPD60R600P7S

Rev.2.2,2021-10-12Final Data Sheet

7AppendixA

Table11RelatedLinks

• IFXCoolMOSP7Webpage:www.infineon.com

• IFXCoolMOSP7applicationnote:www.infineon.com

• IFXCoolMOSP7simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

14

600VCoolMOSªP7PowerTransistorIPD60R600P7S

Rev.2.2,2021-10-12Final Data Sheet

RevisionHistoryIPD60R600P7S

Revision:2021-10-12,Rev.2.2

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2017-06-12 Release of final version

2.12018-04-25

Updated diagram scalings; Nomenclature of product qualification grade was changed;MSL level changed from 1 to 3

2.2 2021-10-12 Updated the wording in table 3 regarding soldering

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