NVMemory2009 Pres

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    NON VOLATILE MEMORY

    Diana Baren, Ashton Clark, Ryan Clark

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    Roadmap

    Flash MemoryPRAM

    CMOx

    NRAM

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    Non-volatile Random Access Memory

    Memory that does not loose its

    information when powered off

    Flash, ROM, PRAM, NRAM,

    CMOx

    Best known form is Flash memory

    but PRAM is the Flash of thenext generation

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    How Flash Memory Saves Data

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    Phase Change Random Access Memory (PRAM

    Numonyx.co

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    PRAM Cell

    Amorphous (0) Crystalline

    Amorphous State (Binary 0Numonyx.co

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    PCM Mechanisms

    Bin ar y 1

    Bi na r y 0

    Bi na r y 0

    Numonyx.co

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    PRAM Advantages

    Numonyx.co

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    Multilevel PCM Breakthrough

    Intel and STMicroelectronic

    find two additional partial

    crystallization states to

    store data

    Doubled memory capacity

    Technologyreview.com

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    Difference between PCM and FLASH

    Numonyx.co

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    How to Beat Flash?

    Transistors cannot be used as selection

    devices

    Diode-like selection device is needed

    The memory cell current has to scale warea

    http://www.unitysemi.com/downloads/news/NVMTS_2008_complete.pdf

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    Flash Scalability

    Flash memory cells have a finite # of read/write cycles

    When a SSD reaches its cycle limit it doesnt crash

    The drive stops allowing writes and becomes read only

    Data can still be accessed

    Flash is est. to reach its limit by ~ 20nm

    http://en.wikipedia.o rg/wiki/Flash_memorySSD = so lid state drive

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    Price of Flash vs. DRAM

    Flash is cheaper than DRAM and PRAM?

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    CMOx Memory Technology

    Why is CMOx cheaper / faster than Flash?

    No transistor in memory cell

    Smaller 0.5F memory cell size2

    Uses less than one mA of write current per cell

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    CMOx Memory Technology (cont.)

    The MLC utilizes a resistance change element

    Conduction across the device is uniform

    Uses 4 physical layers of MLC memory

    Has 4x the density and 10x the write speed of NAND flash

    No new process technology is needed to make CMOx

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    Why Multi-level Cell?

    SLC has high manufacturing costs

    MLC has lower manufacturing costs

    MLC provides an analog characteristic

    a digital component

    http://www.usbcompany.co.uk/wp-content/uploads/2008/04/memory-in-

    branded-usb-sticks.gif

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    How CMOx Works

    Through the application of a high electric

    field across the Tunnel Oxide (TO) layer,

    the charge buildup in the TO can be

    controlled, which leads to a change in

    device resistance.

    Cross section of CMOx Technology

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    The 0.5F Memory Cell2

    The F measure permits comparison of memory cell sizes acros2

    any process technology

    The smaller the F measure, the more memory cells per unit ar2

    F measures for major memory technologies:2

    DRAM 8F or 6F cell size2 2

    SLC NAND Flash 4.5F cell size2

    MLC NAND Flash 2.25F cell size2

    CMOx = 0.5F 2

    F = Feature Size Squared2

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    NRAM: Nano-RAM

    Nantero

    Very Promising

    Use of CNTs

    Van der Waals Force

    d A k?

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    How does NRAM work?

    C Fl

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    Current Flow

    V d W l F

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    Van de Waals Force

    OFF STATE ON STATE

    NRAM Fi

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    NRAM Figures

    NRAM Ti i Di

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    NRAM Timing Diagram

    Ad t t NRAM

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    Advantages to NRAM

    Can be made much Replaces DRAM and

    denser Flash

    Low power needed Leads to Instant on

    ComputersRetains memory

    without power source Longer battery Life

    Faster to Write More Resistant to Wear

    Q ti

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    Questions