Datasheet / Datenblatt IPW65R019C7 - Infineon Technologies

MOSFETMetalOxideSemiconductorFieldEffectTransistor

CoolMOS™C7650VCoolMOS™C7PowerTransistorIPW65R019C7

DataSheetRev.2.1Final

PowerManagement&Multimarket

2

650VCoolMOS™C7PowerTransistor

IPW65R019C7

Rev.2.1,2013-04-18Final Data Sheet

TO-247

DrainPin 2, tab

GatePin 1

SourcePin 3

1DescriptionCoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.

CoolMOS™C7seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.TheproductportfolioprovidesallbenefitsoffastswitchingsuperjunctionMOSFETsofferingbetterefficiency,reducedgatecharge,easyimplementationandoutstandingreliability.

Features•IncreasedMOSFETdv/dtruggedness•BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg•BestinclassRDS(on)/package•Easytouse/drive•Pb-freeplating,halogenfreemoldcompound•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)

Benefits•Enablinghighersystemefficiency•Enablinghigherfrequency/increasedpowerdensitysolutions•Systemcost/sizesavingsduetoreducedcoolingrequirements•Highersystemreliabilityduetoloweroperatingtemperatures

ApplicationsPFCstagesandhardswitchingPWMstagesfore.g.Computing,Server,Telecom,UPSandSolar.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj,max 700 V

RDS(on),max 19 mΩ

Qg.typ 215 nC

ID,pulse 496 A

Eoss@400V 27 µJ

Body diode di/dt 70 A/µs

Type/OrderingCode Package Marking RelatedLinksIPW65R019C7 PG-TO 247 65C7019 see Appendix A

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IPW65R019C7


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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IPW65R019C7


2MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current 1) ID --

--

7562 A TC=25°C

TC=100°C

Pulsed drain current 2) ID,pulse - - 496 A TC=25°C

Avalanche energy, single pulse EAS - - 583 mJ ID=12.4A; VDD=50V

Avalanche energy, repetitive EAR - - 2.92 mJ ID=12.4A; VDD=50V

Avalanche current, single pulse IAS - - 12.4 A -

MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V

Gate source voltage (static) VGS -20 - 20 V static;

Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)

Power dissipation Ptot - - 446 W TC=25°C

Storage temperature Tstg -55 - 150 °C -

Operating junction temperature Tj -55 - 150 °C -

Mounting torque - - - 60 Ncm M3 and M3.5 screws

Continuous diode forward current IS - - 75 A TC=25°C

Diode pulse current2) IS,pulse - - 496 A TC=25°C

Reverse diode dv/dt 3) dv/dt - - 1.5 V/ns VDS=0...400V,ISD<=IS,Tj=25°C

Maximum diode commutation speed dif/dt - - 70 A/µs VDS=0...400V,ISD<=IS,Tj=25°C

Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1) Limited by Tj max. 2) Pulse width tp limited by Tj,max3)IdenticallowsideandhighsideswitchwithidenticalRG

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IPW65R019C7


3Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case RthJC - - 0.28 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded

Thermal resistance, junction - ambientfor SMD version RthJA - - - °C/W n.a.

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for

10s

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4ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=1mA

Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=2.92mA

Zero gate voltage drain current IDSS --

-50

5- µA VDS=650,VGS=0V,Tj=25°C

VDS=650,VGS=0V,Tj=150°C

Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.0170.040

0.019- Ω VGS=10V,ID=58.3A,Tj=25°C

VGS=10V,ID=58.3A,Tj=150°C

Gate resistance RG - 0.45 - Ω f=1MHz,opendrain

Table5DynamiccharacteristicsValues


Input capacitance Ciss - 9900 - pF VGS=0V,VDS=400V,f=250kHz

Output capacitance Coss - 160 - pF VGS=0V,VDS=400V,f=250kHz

Effective output capacitance, energyrelated 1) Co(er) - 338 - pF VGS=0V,VDS=0...400V

Effective output capacitance, time related2)

Co(tr) - 3320 - pF ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time td(on) - 30 - ns VDD=400V,VGS=13V,ID=58.3A,RG=1.8Ω

Rise time tr - 27 - ns VDD=400V,VGS=13V,ID=58.3A,RG=1.8Ω

Turn-off delay time td(off) - 106 - ns VDD=400V,VGS=13V,ID=58.3A,RG=1.8Ω

Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=58.3A,RG=1.8Ω

Table6GatechargecharacteristicsValues


Gate to source charge Qgs - 53 - nC VDD=400V,ID=58.3A,VGS=0to10V

Gate to drain charge Qgd - 71 - nC VDD=400V,ID=58.3A,VGS=0to10V

Gate charge total Qg - 215 - nC VDD=400V,ID=58.3A,VGS=0to10V

Gate plateau voltage Vplateau - 5.4 - V VDD=400V,ID=58.3A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

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IPW65R019C7


Table7ReversediodecharacteristicsValues


Diode forward voltage VSD - 0.9 - V VGS=0V,IF=58.3A,Tj=25°C

Reverse recovery time trr - 760 - ns VR=400V,IF=75A,diF/dt=70A/µs

Reverse recovery charge Qrr - 20 - µC VR=400V,IF=75A,diF/dt=70A/µs

Peak reverse recovery current Irrm - 50 - A VR=400V,IF=75A,diF/dt=70A/µs

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IPW65R019C7


5Electricalcharacteristicsdiagrams

Table8

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

50

100

150

200

250

300

350

400

450

500

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-2

10-1

100

101

102

1031 µs10 µs100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Table9

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-2

10-1

100

101

102

1031 µs10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-110-3

10-2

10-1

100

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

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IPW65R019C7


Table10

Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

100

200

300

400

500

600

20 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

50

100

150

200

250

300

350

20 V10 V

8 V7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Table11

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 50 100 150 200 250 3000.03

0.04

0.05

0.06

0.07

20 V

5.5 V 6 V 6.5 V7 V

10 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [Ω]

-50 -25 0 25 50 75 100 125 1500.005

0.010

0.015

0.020

0.025

0.030

0.035

0.040

0.045

0.050

typ

98%

RDS(on)=f(Tj);ID=58.3A;VGS=10V

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Table12

Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

100

200

300

400

500

600

150 °C

25 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 50 100 150 200 2500

2

4

6

8

10

12

400 V120 V

VGS=f(Qgate);ID=58.3Apulsed;parameter:VDD

Table13

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.510-1

100

101

102

103

125 °C25 °C

IF=f(VSD);parameter:Tj

Diagram12:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

50

100

150

200

250

300

350

400

450

500

550

600

EAS=f(Tj);ID=12.4A;VDD=50V

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IPW65R019C7


Table14

Diagram13:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-60 -20 20 60 100 140 180580

600

620

640

660

680

700

720

740

760

VBR(DSS)=f(Tj);ID=1mA

Diagram14:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 500100

101

102

103

104

105

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=250kHz

Table15

Diagram15:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 5000

5

10

15

20

25

30

35

Eoss=f(VDS)

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6TestCircuits

Table16DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

t

V ,I

Irrm

IF

VDS

10 %Irrm

trrtF tS

QF QS

dIF / dt

dIrr / dt

VDS(peak)

Qrr = QF +QS

trr =tF +tS

VDS

IF

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table17SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table18UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

VD

V(BR)DS

IDVDS

VDSID

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7PackageOutlines

Figure1OutlinePG-TO247,dimensionsinmm/inches

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8AppendixA

Table19RelatedLinks

• IFXCoolMOSTMC7Webpage:www.infineon.com

• IFXCoolMOSTMC7applicationnote:www.infineon.com

• IFXCoolMOSTMC7simulationmodels:www.infineon.com

• IFXDesigntools:www.infineon.com

http://www.infineon.com/cms/en/product/promopages/designtools/index.html

http://www.infineon.com/C7



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IPW65R019C7


RevisionHistoryIPW65R019C7

Revision:2013-04-18,Rev.2.1

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2013-03-15 Release of final version

2.1 2013-04-18 final datasheet

WeListentoYourCommentsAnyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected]

Edition2011-08-01PublishedbyInfineonTechnologiesAG81726München,Germany©2011InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Datasheet / Datenblatt IPW65R019C7 - Infineon Technologies

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